Title :
High performance low power 6.0 A HBT devices and circuits
Author :
Monier, C. ; Cavus, A. ; Sandhu, R. ; Li, D. ; Nam, P. ; Chan, B. ; Oshiro, A. ; Matheson, D. ; Gutierrez-Aitken, A.
Author_Institution :
Northrop Grumman Space Technol., Redondo Beach, CA
Abstract :
In bipolar logic circuits, the use of a narrow band gap Inx Ga1-xAs system with high indium content (80 < x < 100) materials in the base layer will primarily impact the device turn-on voltage VBE that could be reduced by half compared to conventional III-V technologies. This will directly translate to lower supply voltage in digital applications. This paper discusses device technology for bipolar circuit applications based on material systems with lattice parameter towards that of InAs
Keywords :
III-V semiconductors; heterojunction bipolar transistors; indium compounds; low-power electronics; microwave bipolar transistors; millimetre wave bipolar transistors; narrow band gap semiconductors; 60 Aring; HBT circuits; HBT devices; In0.86Al0.14As-In0.86Ga0.14 As; InxGa1-xAs; bipolar logic circuits; device technology; material systems; narrow band gap system; Buffer layers; Circuits; Heterojunction bipolar transistors; Indium phosphide; Lattices; Narrowband; Rough surfaces; Surface morphology; Surface roughness; Voltage;
Conference_Titel :
Device Research Conference Digest, 2005. DRC '05. 63rd
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-9040-7
DOI :
10.1109/DRC.2005.1553151
