Title :
Mode characteristics of vertical-cavity surface-emitting lasers based on GaAs quantum wells
Author :
Haisler, V.A. ; Derebezov, I.A.
Author_Institution :
Inst. of Semicond. Phys., Novosibirsk, Russia
Abstract :
The results of the detailed analysis of mode behavior of vertical-cavity surface-emitting lasers (VCSEL´s) with GaAs QW´s are presented. The design of the investigated VCSEL is similar to the design of commercial grade 850 nm VCSEL´s. The investigations of the laser mode structure have been carried out for VCSEL´s with apertures in the range from 1 μm up to 14 μm. The main lasing parameters have been calculated for the investigated VCSEL´s using 3D rigorous eigenmode expansion model. The measured value of the blue shift for the fundamental mode with the reduction of VCSEL´s aperture from 14 μm down to 1 μm is about 6 nm. The super-fine doublet and triplet structure of VCSEL´s modes has been discovered using a high resolution (∼10 pm) spectrometer. The presumable mechanisms of the observed mode splitting are presented in the report.
Keywords :
III-V semiconductors; eigenvalues and eigenfunctions; gallium arsenide; laser beams; laser cavity resonators; laser modes; quantum well lasers; semiconductor quantum wells; surface emitting lasers; 1 to 14 micron; 3D rigorous eigenmode expansion model; 850 nm; GaAs; GaAs quantum wells; VCSEL design; blue shift; laser apertures; laser mode characteristics; laser mode structure; laser spectrometer; lasing characteristics; mode behavior; mode splitting; super-fine doublet structure; super-fine triplet structure; vertical-cavity surface-emitting lasers; Apertures; Gallium arsenide; Laser modes; Laser theory; Mirrors; Optical surface waves; Quantum well lasers; Stability; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Advanced Optoelectronics and Lasers, 2005. Proceedings of CAOL 2005. Second International Conference on
Print_ISBN :
0-7803-9130-6
DOI :
10.1109/CAOL.2005.1553871