Title :
Determination of Single-Event Effect Application Requirements for Enhancement Mode Gallium Nitride HEMTs for Use in Power Distribution Circuits
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
Characterization of destructive single-event effects in enhancement mode gallium nitride high electron mobility transistors is presented as related to the optimal application of and operating conditions for power management circuits. A mechanism for the phenomenon is also presented.
Keywords :
III-V semiconductors; gallium compounds; power HEMT; wide band gap semiconductors; GaN; destructive single-event effect; enhancement mode gallium nitride HEMT; high electron mobility transistor; power distribution circuit; Capacitance; Gallium nitride; HEMTs; MODFETs; Radiation effects; Threshold voltage; Buck regulator; gallium nitride; single-event effects;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2014.2365545
