Title :
Plasma chemical etching of silicon in MEMS-technology
Author_Institution :
Novosibirsk State Tech. Univ., Russia
fDate :
26 June-3 July 2004
Abstract :
In this work, the results for the modeling and experimental research of plasma chemical etching of Si are described. The model for the etching process is constructed. The results of accounts are given. The speed of Si etching, up to 6.5 μm/min, experimentally is received. The etching of silicon is limited to a stage of chemical delivery of active particles to a surface Si, where there is a reaction of etching. The process can be used in MEMS-technology.
Keywords :
etching; micromechanical devices; plasma materials processing; silicon; MEMS-technology; Si; active particles; micromechanical devices; plasma chemical etching; Chemical processes; Chemical technology; Etching; Magnetic materials; Magnets; Micromechanical devices; Plasma applications; Plasma chemistry; Plasma materials processing; Silicon;
Conference_Titel :
Science and Technology, 2004. KORUS 2004. Proceedings. The 8th Russian-Korean International Symposium on
Print_ISBN :
0-7803-8383-4
DOI :
10.1109/KORUS.2004.1555320
