DocumentCode
445654
Title
Plasma chemical etching of silicon in MEMS-technology
Author
Bogomolov, B.K.
Author_Institution
Novosibirsk State Tech. Univ., Russia
Volume
1
fYear
2004
fDate
26 June-3 July 2004
Firstpage
203
Abstract
In this work, the results for the modeling and experimental research of plasma chemical etching of Si are described. The model for the etching process is constructed. The results of accounts are given. The speed of Si etching, up to 6.5 μm/min, experimentally is received. The etching of silicon is limited to a stage of chemical delivery of active particles to a surface Si, where there is a reaction of etching. The process can be used in MEMS-technology.
Keywords
etching; micromechanical devices; plasma materials processing; silicon; MEMS-technology; Si; active particles; micromechanical devices; plasma chemical etching; Chemical processes; Chemical technology; Etching; Magnetic materials; Magnets; Micromechanical devices; Plasma applications; Plasma chemistry; Plasma materials processing; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Science and Technology, 2004. KORUS 2004. Proceedings. The 8th Russian-Korean International Symposium on
Print_ISBN
0-7803-8383-4
Type
conf
DOI
10.1109/KORUS.2004.1555320
Filename
1555320
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