Title :
New effects in gallium arsenide implanted with ions and subjected to radiation annealing
Author_Institution :
Siberian Physicotech. Inst., Tomsk, Russia
fDate :
26 June-3 July 2004
Abstract :
The electrophysical methods and RBS technique were used to study the behavior of impurities and defects in implanted gallium arsenide after rapid thermal, low- and high-energy electron-beam annealings.
Keywords :
III-V semiconductors; Rutherford backscattering; crystal defects; electron beam annealing; electron beam effects; gallium arsenide; impurities; ion implantation; rapid thermal annealing; semiconductor doping; GaAs:Cd; GaAs:S; GaAs:Si; RBS; defects; electrophysical methods; high-energy electron-beam annealing; impurities; ion-implanted gallium arsenide; low-energy electron-beam annealing; radiation annealing; rapid thermal annealing; Atomic measurements; Electron mobility; Gallium arsenide; Impurities; Ionization; Ionizing radiation; Plasma temperature; Rapid thermal annealing; Semiconductor films; Temperature distribution;
Conference_Titel :
Science and Technology, 2004. KORUS 2004. Proceedings. The 8th Russian-Korean International Symposium on
Print_ISBN :
0-7803-8383-4
DOI :
10.1109/KORUS.2004.1555586
