The model of hole scattering by GaAs/AlAs heteroboundary

Author

Chernyshov, V.N. ; Karavaev, G.F.

Author_Institution

Tomsk Polytech. Univ., Russia

Volume

2

fYear

2004

fDate

26 June-3 July 2004

Firstpage

203

Abstract

The matching conditions are found for the hole envelope functions on heteroboundaries GaAs/AlAs with orientations [001]. They are obtained as a result of simplification of description of electronic states by the pseudopotential method. The mixing of light and heavy holes on heteroboundary was demonstrated. The obtained matching conditions completely agree with symmetry of a problem. There is the mixing of envelope functions with their normal derivatives as well as the mixing of derivatives with functions. Parameters describing the mixing of light and heavy holes on a heteroboundary are small enough. These results corresponds to recent calculations of other authors but contradicts earlier guesses and estimates.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; interface states; pseudopotential methods; semiconductor heterojunctions; spin-orbit interactions; GaAs-AlAs; [001] orientation; electronic states; heteroboundary; hole envelope functions; hole scattering; matching conditions; pseudopotential method; spin-orbit interaction; Charge carrier processes; Electron optics; Equations; Function approximation; Gallium arsenide; Light scattering; Nanostructures; Optical mixing; Optical scattering; Optical superlattices;

fLanguage

English

Publisher

ieee

Conference_Titel

Science and Technology, 2004. KORUS 2004. Proceedings. The 8th Russian-Korean International Symposium on

Print_ISBN

0-7803-8383-4

Type

conf

DOI

10.1109/KORUS.2004.1555592

Filename

1555592