The model of hole scattering by GaAs/AlAs heteroboundary

The matching conditions are found for the hole envelope functions on heteroboundaries GaAs/AlAs with orientations [001]. They are obtained as a result of simplification of description of electronic states by the pseudopotential method. The mixing of light and heavy holes on heteroboundary was demonstrated. The obtained matching conditions completely agree with symmetry of a problem. There is the mixing of envelope functions with their normal derivatives as well as the mixing of derivatives with functions. Parameters describing the mixing of light and heavy holes on a heteroboundary are small enough. These results corresponds to recent calculations of other authors but contradicts earlier guesses and estimates.