Title : 
Retrieval property of associative memory with negative resistance
         
        
            Author : 
Hayakawa, Yoshihiro ; Li, Hongge ; Nakajima, Koji
         
        
            Author_Institution : 
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
         
        
        
        
            fDate : 
31 July-4 Aug. 2005
         
        
        
            Abstract : 
The self-connection can enlarge the memory capacity of an associative memory based on the neural network, however, the basin size of the embedded memory state shrinks. The problem of basin size is related to undesirable stable states which are spurious states. If we can destabilize these spurious states, we expect to improve the basin size. The inverse function delayed (ID) model which includes the BVP model has the negative resistance on its dynamics. The negative resistance of the ID model can destabilize the equilibrium states on some regions of conventional neural network. Hence, the associative memory based on the ID model has possibilities of improving the basin size of the network which has the self-connection in order to enlarge a memory capacity. In this paper, we show the improvement of performance compared with the conventional neural network by computer simulation.
         
        
            Keywords : 
content-addressable storage; neural nets; associative memory; basin size; inverse function delayed model; negative resistance; neural network; retrieval property; spurious states; Associative memory; Biological system modeling; Computer simulation; Delay; Electric resistance; Electronic mail; Hysteresis; Immune system; Neural networks; Power system modeling;
         
        
        
        
            Conference_Titel : 
Neural Networks, 2005. IJCNN '05. Proceedings. 2005 IEEE International Joint Conference on
         
        
            Print_ISBN : 
0-7803-9048-2
         
        
        
            DOI : 
10.1109/IJCNN.2005.1556022