Title :
Carbon Nanotube Nonvolatile Thin-Film Transistors With (Bi,Nd)4Ti3O12 Gate Insulators
Author :
Qiuhong Tan ; Jinbin Wang ; Xiangli Zhong ; Qianjin Wang ; Yingkai Liu ; Junsheng Shi ; Shaoquan Jiang
Author_Institution :
Coll. of Phys. & Electron. Inf., Yunnan Normal Univ., Kunming, China
Abstract :
Single-walled carbon nanotube (SWCNT) nonvolatile thin-film transistors (TFTs) with (Bi,Nd)4Ti3O12 (BNT) gate insulators were fabricated. The electrical properties of BNT films and SWCNT/BNT TFTs were investigated. The subthreshold swing, the threshold voltage, the channel mobility, and the ON/OFF ratio of SWCNT/BNT TFTs reach to 62.5 mV/decade, 0.45 V, 1.3 × 103 cm2/Vs, and 1.5 × 107, respectively. Notably, the device shows a memory window of ~4.1 V and a long retention time of ~107 s. These mainly attribute to the SWCNTs channel and BNT ferroelectric gate insulator, which induce much larger charge in channel layer. These results suggest that the SWCNT/BNT TFTs are suitable for the next-generation nonvolatile memory devices and integrated circuits.
Keywords :
bismuth compounds; carbon nanotubes; ferroelectric thin films; neodymium compounds; thin film transistors; titanium compounds; (Bi-Nd)4Ti3O12; BNT ferroelectric gate insulator; BNT films; BNT gate insulators; ON-OFF ratio; SWCNT channel; SWCNT nonvolatile thin-film transistors; SWCNT-BNT TFT; channel mobility; electrical properties; integrated circuits; next-generation nonvolatile memory devices; single-walled carbon nanotube TFT; subthreshold swing; threshold voltage; voltage 0.45 V; Educational institutions; Electrodes; Insulators; Logic gates; Nonvolatile memory; Thin film transistors; Ferroelectric film; nonvolatile memory; single-walled carbon nanotube (SWCNTs); thin-film transistors (TFTs); thin-film transistors (TFTs).;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2014.2326407
