DocumentCode
446649
Title
Strain-compensation of inas quantum dots: dot size dependence
Author
Zhang, Wei ; Uesugi, Katsuhiro ; Matsumura, Naoki ; Suemune, Ikuo
fYear
2005
fDate
38544
Firstpage
133
Lastpage
134
Keywords
Capacitive sensors; Degradation; Gallium arsenide; Indium gallium arsenide; Optical sensors; Quantum dots; Stimulated emission; Temperature; Tensile strain; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics Conference, 2005. International
Print_ISBN
0-7803-9240-X
Type
conf
DOI
10.1109/IQEC.2005.1560848
Filename
1560848
Link To Document