Title :
Strain-compensation of inas quantum dots: dot size dependence
Author :
Zhang, Wei ; Uesugi, Katsuhiro ; Matsumura, Naoki ; Suemune, Ikuo
Keywords :
Capacitive sensors; Degradation; Gallium arsenide; Indium gallium arsenide; Optical sensors; Quantum dots; Stimulated emission; Temperature; Tensile strain; US Department of Transportation;
Conference_Titel :
Quantum Electronics Conference, 2005. International
Print_ISBN :
0-7803-9240-X
DOI :
10.1109/IQEC.2005.1560848
