Title :
Effects of thermal annealing on optical properties of InGaN quantum dots grown by metalorganic chemical vapor deposition
Author :
Hsueh, T.H. ; Tsai, M.Y. ; Wang, T.C. ; Kuo, H.C. ; Wang, S.C.
Keywords :
Chemical vapor deposition; Gallium nitride; Indium gallium arsenide; Optical devices; Photoluminescence; Quantum dots; Rapid thermal annealing; Stimulated emission; Temperature measurement; US Department of Transportation;
Conference_Titel :
Quantum Electronics Conference, 2005. International
Print_ISBN :
0-7803-9240-X
DOI :
10.1109/IQEC.2005.1560850
