DocumentCode :
446652
Title :
Study of InGaN self-assembled quantum dots with interruption growth by metal organic chemical vapor deposition
Author :
Yao, H.H. ; Huang, G.S. ; Chen, C.Y. ; Liang, W.D. ; Kuo, H.C. ; Wang, S.C.
fYear :
2005
fDate :
38544
Firstpage :
139
Lastpage :
140
Keywords :
Atom optics; Buffer layers; Chemical vapor deposition; Gallium nitride; MOCVD; Optical buffering; Optical microscopy; Organic chemicals; Quantum dots; US Department of Transportation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics Conference, 2005. International
Print_ISBN :
0-7803-9240-X
Type :
conf
DOI :
10.1109/IQEC.2005.1560851
Filename :
1560851
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=446652
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