DocumentCode :
446689
Title :
Highly linear G/sub m/ element for high-frequency applications
Author :
Karvonen, Sami ; Riley, Thomas ; Kostamovaara, Juha
Author_Institution :
Dept. of Electr. Eng. & Infotech Oulu, Oulu Univ.
Volume :
1
fYear :
2003
fDate :
30-30 Dec. 2003
Firstpage :
145
Abstract :
A constant-Gm highly linear transconductance (Gm ) cell based on the use of a linear passive resistor and feedback technique is presented. The high-frequency linearity properties of the circuit are investigated using the Volterra analysis method. Simulation results of a linearity-optimized Gm element in 0.35 mum CMOS are presented showing a THD of -75.7 dB at 50 MHz for a 1.8 Vp-p input signal
Keywords :
CMOS analogue integrated circuits; VHF circuits; Volterra series; circuit feedback; continuous time filters; harmonic distortion; 0.35 micron; 1.8 V; 50 MHz; Volterra analysis; circuit simulation; feedback technique; high frequency applications; highly linear transconductance cell; linear passive resistor; total harmonic distortion; Character generation; Feedback amplifiers; Feedback circuits; Impedance; Linearity; MOSFETs; Negative feedback loops; Transconductance; Transconductors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2003 IEEE 46th Midwest Symposium on
Conference_Location :
Cairo
ISSN :
1548-3746
Print_ISBN :
0-7803-8294-3
Type :
conf
DOI :
10.1109/MWSCAS.2003.1562239
Filename :
1562239
Link To Document :
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