Title :
Single-Port SRAM-Based Transpose Memory With Diagonal Data Mapping for Large Size 2-D DCT/IDCT
Author :
Qing Shang ; Yibo Fan ; Weiwei Shen ; Sha Shen ; Xiaoyang Zeng
Author_Institution :
State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
Abstract :
This brief describes a new method to implement the single-port SRAM-based transpose memory for large size discrete cosine transform (DCT)/indiscrete cosine transform (IDCT) which are used in the latest video coding standard, such as high efficiency video coding. Instead of shift-register array or multiport SRAM, only single-port SRAM is used in the proposed design. A new diagonal data mapping scheme is proposed to reduce the number of SRAM banks used to implement the transpose memory. This design can be flexibly extended to support DCT/IDCT of different transform sizes and different data throughput rates. To support larger size DCT/IDCT, only the depth of SRAM needs to be increased. To support different data throughput rate, multiple SRAM banks are well organized according to the required throughput. Row access and column access can be perfectly supported under single port SRAM. The equivalent gate count per bit (EGC) of proposed approach is less than two, which is much more efficient than the previous method. It is suitable for real-time processing of the video with the resolution up to 1080P HD or even higher.
Keywords :
SRAM chips; discrete cosine transforms; shift registers; video coding; EGC; column access; data throughput rate; diagonal data mapping scheme; discrete cosine transform; equivalent gate count per bit; indiscrete cosine transform; large size 2D DCT-IDCT; multiport SRAM; row access; shift-register array; single-port SRAM-based transpose memory; video coding standard; video resolution; Arrays; Discrete cosine transforms; Hardware; Random access memory; Throughput; Video coding; Discrete cosine transform (DCT)/indiscrete cosine transform (IDCT); high efficiency video coding (HEVC); single-port SRAM; transpose memory; transpose memory.;
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
DOI :
10.1109/TVLSI.2013.2295116