Title :
Analysis of drain-to-body band-to-band tunneling in double gate MOSFET
Author :
Ananthan, Hari ; Bansal, Aditya ; Roy, Kaushik
Author_Institution :
Dept. of ECE, Purdue Univ., West Lafayette, IN, USA
Abstract :
An analytical model is proposed for drain-to-body band-to-band tunneling leakage in nanoscale symmetric and asymmetric double-gate MOS devices. The model is used to analyze the impact of technology and circuit parameters, and suggest ways of minimizing this leakage.
Keywords :
MOSFET; semiconductor device models; tunnelling; asymmetric double-gate MOS devices; double gate MOSFET; drain-to-body band-to-band tunneling; nanoscale symmetric double-gate MOS devices; tunneling leakage; Analytical models; CMOS technology; Circuit simulation; MOS devices; MOSFET circuits; Nanoscale devices; Predictive models; Semiconductor process modeling; Tunneling; Voltage;
Conference_Titel :
SOI Conference, 2005. Proceedings. 2005 IEEE International
Print_ISBN :
0-7803-9212-4
DOI :
10.1109/SOI.2005.1563573
