DocumentCode
446983
Title
AlGaN/GaN power HEMT for Ka-band
Author
Abolduyev, I.M. ; Gladysheva, N.B. ; Dorofeev, A.A. ; Matveev, Yu A. ; Minnebaev, V.M. ; Tchemyavsky, A.A.
Author_Institution
SRI, Moscow, Russia
Volume
1
fYear
2005
fDate
12-16 Oct. 2005
Abstract
Results of design and manufacturing of power AlGaN/GaN HEMT for Ka-band are submitted. It has Pout = 1, 4W/mm, efficiency 33% at F = 35 GHz.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; millimetre wave field effect transistors; power HEMT; wide band gap semiconductors; 35 GHz; AlGaN-GaN; Ka-band; power HEMT; Aluminum gallium nitride; Gain measurement; Gallium nitride; HEMTs; IEEE catalog; Manufacturing; Microwave technology; Organizing; Power generation; Power measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Telecommunication Technology, 2005 15th International Crimean Conference
Print_ISBN
966-7968-80-4
Type
conf
DOI
10.1109/CRMICO.2005.1564855
Filename
1564855
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