Title :
AlGaN/GaN power HEMT for Ka-band
Author :
Abolduyev, I.M. ; Gladysheva, N.B. ; Dorofeev, A.A. ; Matveev, Yu A. ; Minnebaev, V.M. ; Tchemyavsky, A.A.
Author_Institution :
SRI, Moscow, Russia
Abstract :
Results of design and manufacturing of power AlGaN/GaN HEMT for Ka-band are submitted. It has Pout = 1, 4W/mm, efficiency 33% at F = 35 GHz.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; millimetre wave field effect transistors; power HEMT; wide band gap semiconductors; 35 GHz; AlGaN-GaN; Ka-band; power HEMT; Aluminum gallium nitride; Gain measurement; Gallium nitride; HEMTs; IEEE catalog; Manufacturing; Microwave technology; Organizing; Power generation; Power measurement;
Conference_Titel :
Microwave & Telecommunication Technology, 2005 15th International Crimean Conference
Print_ISBN :
966-7968-80-4
DOI :
10.1109/CRMICO.2005.1564855
