Millimeter wave HEMTs of R&PC ≪Istok≫

First results of heterostructure field effect transistors with 120, 300 and 600 μm gate widths developed in R&PC ≪Istok≫ are presented. Pseudo-morphic high electron mobility epitaxial structure were grown by molecular beam epitaxy. Typical channel carrier concentration 2.0 10¹² cm^-2 with mobilities > 6000 cm²/V-s were obtained at 300 K. The transistors were fabricated with 0,15-0,25 μm T-gate. The devises demonstrates minimum noise figure less than 2 dB, associated gain more than 5 dB at 40 GHz, and output power density about 900 mW/mm at centimeter wave-length band with power added efficiency more then 30%.