Title :
Broadband power limiter
Author :
Abolduyev, I.M. ; Vald-Periov, V.M. ; Minnebaev, V.M.
Author_Institution :
SRI, Moscow, Russia
Abstract :
Presented in this paper are results of design and manufacture of broadband limiter MIC (1...18 GHz), based on GaAs p-i-n diodes. The limiter can be used as devices for protection of input low noise amplifiers, input signal level limiter for broadband power amplifiers.
Keywords :
limiters; low noise amplifiers; p-i-n diodes; power amplifiers; broadband power amplifiers; broadband power limiter; p-i-n diodes; Broadband amplifiers; FETs; Gallium arsenide; Insertion loss; Low-noise amplifiers; Microwave integrated circuits; Microwave technology; Organizing; PIN photodiodes; Power system protection;
Conference_Titel :
Microwave & Telecommunication Technology, 2005 15th International Crimean Conference
Print_ISBN :
966-7968-80-4
DOI :
10.1109/CRMICO.2005.1564864
