Title :
Research of Single-Event Burnout in Power Planar VDMOSFETs by Localized Carrier Lifetime Control
Author :
Cheng-Hao Yu ; Ying Wang ; Fei Cao ; Li-Lian Huang ; Yu-Ye Wang
Author_Institution :
Coll. of Inf. & Commun. Eng., Harbin Eng. Univ., Harbin, China
Abstract :
This paper presents 2-D numerical simulation results of single-event burnout (SEB) in power planar vertical double-diffused MOSFET (VDMOSFET) with localized carrier lifetime control. A low carrier lifetime control region (LCLCR) is introduced to accelerate the recombination rate of the generated holes caused by an ion´s impact. The optimal localized range with LCLCR in epitaxial layer has been investigated. The SEB inhibition mechanism with LCLCR is analyzed and discussed. A VDMOSFET with localized LCLCR can operate like a normal VDMOSFET and can have improved SEB performance effectively. In addition, the leakage current density in breakdown characteristics of VDMOSFET is studied based on the variation of carrier lifetime.
Keywords :
carrier lifetime; electron-hole recombination; ion beam effects; power MOSFET; radiation hardening (electronics); 2D numerical simulation; electron-hole recombination; hole generation; ion impact; localized carrier lifetime control; low carrier lifetime control region; power planar VDMOSFET; power planar vertical double diffused MOSFET; single event burnout; Charge carrier lifetime; Leakage currents; Logic gates; MOSFET; Performance evaluation; Semiconductor optical amplifiers; Threshold voltage; Low carrier lifetime control region (LCLCR); numerical simulation; power vertical double-diffused MOSFET (VDMOSFET); single-event burnout (SEB); single-event burnout (SEB).;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2014.2365817
