Title :
Sensing characteristics of a novel NH3-nitrided Schottky-diode hydrogen sensor
Author :
Tang, W.M. ; Lai, P.T. ; Xu, J.P. ; Chan, C.L.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ., China
Abstract :
A novel NH3-nitrided Schottky-diode hydrogen sensor has been successfully fabricated. Measurements have been performed to investigate the sensitivity, stability and response speed of the sensor at different temperatures and hydrogen concentrations. It can respond to hydrogen variation very quickly and can give significant response even at low hydrogen concentration. The studied device exhibits high sensitivity of 350% at 300 °C when 800 ppm H2 in N2 gas is introduced. The sensitivity is 15 times greater than that of the Pt-SiC sensor. The excellent hydrogen-sensing characteristics of this novel sensor make it very suitable for detecting hydrogen leakage in high-temperature environment. The effects of hydrogen adsorption on the barrier height and hydrogen reaction kinetics are also investigated.
Keywords :
Schottky barriers; Schottky diodes; adsorption; gas sensors; reaction kinetics; sensitivity; 300 degC; NH3; Schottky-diode hydrogen sensor; barrier height; hydrogen adsorption; hydrogen concentrations; hydrogen leakage detection; reaction kinetics; Annealing; Fabrication; Furnaces; Hydrogen; Insulation; Leak detection; Sensor phenomena and characterization; Silicon carbide; Stability; Temperature sensors;
Conference_Titel :
Industrial Electronics, 2004 IEEE International Symposium on
Print_ISBN :
0-7803-8304-4
DOI :
10.1109/ISIE.2004.1571779
