Title :
Infrared radiation induced spin photocurrents in GaN low-dimensional structures
Author :
Weber, W. ; Ganichev, S.D. ; Bel´kov, V.V. ; Golub, L.E. ; Prettl, W. ; Kvon, Z.D. ; Cho, Hyun-Ick ; Lee, Jung-Hee
Author_Institution :
Fac. of Phys., Regensburg Univ., Germany
Abstract :
Infrared radiation spin photocurrents have been observed in GaN quantum well structures. Observed currents change sign upon reversing of radiation helicity demonstrating an existence of Rashba/Dresselhaus spin splitting of the conduction band in this new type of materials. Approvement of spin degeneracy removal in GaN structures allows to consider this material as a candidate for semiconductor spintronic.
Keywords :
III-V semiconductors; conduction bands; gallium compounds; magnetoelectronics; photoconductivity; radiation hardening (electronics); semiconductor quantum wells; wide band gap semiconductors; GaN; GaN quantum well structures; Rashba/Dresselhaus spin splitting; conduction band; infrared radiation spin photocurrents; low-dimensional structures; semiconductor spintronic; spin degeneracy removal; Conducting materials; Gallium nitride; Laser transitions; Magnetoelectronics; Optical polarization; Optical pumping; Photoconductivity; Photovoltaic effects; Physics; Semiconductor materials;
Conference_Titel :
Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005. The Joint 30th International Conference on
Print_ISBN :
0-7803-9348-1
DOI :
10.1109/ICIMW.2005.1572409
