A 300-GHz heterostructure barrier varactor (HBV) frequency septupler

Author

Xiao, Qun ; Hesler, Jeffrey L. ; Duan, Yiwei ; Crowe, Thomas W. ; Weikle, Robert M., II

Author_Institution

Charles L. Brown Dept. of Electr. & Comput. Eng., Virginia Univ., Charlottesville, VA, USA

Volume

1

fYear

2005

fDate

19-23 Sept. 2005

Firstpage

80

Abstract

Heterostructure barrier varactor (HBV) frequency septuplers for the WR-3 waveguide band have been designed, fabricated and tested. The HBV devices are fabricated using the InGaAs/InAlAs material system. Nonlinear simulations and linear electromagnetic modelling of the septupler design are discussed. 210 μW of output power and a conversion efficiency of 0.25% have been measured at 240 GHz.

Keywords

III-V semiconductors; aluminium compounds; frequency multipliers; gallium arsenide; indium compounds; millimetre wave devices; semiconductor device models; varactors; 210 muW; 240 GHz; 300 GHz; InGaAs-InAlAs; WR-3 waveguide band; frequency septupler; heterostructure barrier varactor; linear electromagnetic modelling; nonlinear simulations; Electromagnetic measurements; Electromagnetic modeling; Electromagnetic waveguides; Frequency; Indium compounds; Indium gallium arsenide; Power generation; Power measurement; Testing; Varactors;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005. The Joint 30th International Conference on

Print_ISBN

0-7803-9348-1

Type

conf

DOI

10.1109/ICIMW.2005.1572416

Filename

1572416