Title :
Investigation of drift waves in semiconducting multilayered structure
Author :
Bulgakov, A.A. ; Shramkova, O.V.
Author_Institution :
Dept. of Solid-State Radiophys., Nat. Acad. of Sci. of Ukraine, Kharkov, Ukraine
Abstract :
The drift waves in infinite layered periodic structures placed into an external electric field are considered in the work. We investigate the structure composed of electron and hole semiconductors. It is assumed that the thickness of layers less than length of electromagnetic wave. It is shown that drift waves in such structure can propagate on the angle to the direction of current. The properties of waves are determined by the direction of propagation and thicknesses of layers. The instability increments for drift waves are investigated.
Keywords :
drift instability; periodic structures; plasma drift waves; plasma electromagnetic wave propagation; semiconductor plasma; drift waves; electromagnetic wave; electron semiconductor; external electric field; hole semiconductor; infinite layered periodic structure; layer thickness; propagation direction; semiconducting multilayered structure; Anisotropic magnetoresistance; Charge carrier processes; Electromagnetic propagation; Electromagnetic scattering; Frequency; Periodic structures; Plasma applications; Plasma waves; Semiconductivity; Semiconductor materials;
Conference_Titel :
Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005. The Joint 30th International Conference on
Print_ISBN :
0-7803-9348-1
DOI :
10.1109/ICIMW.2005.1572437
