Title :
Counterintuitive behavior of electron temperature in terahertz-driven heterojunctions
Author_Institution :
Shanghai Inst. of Microsystem & Inf. Technol., Chinese Acad. of Sci., Shanghai, China
Abstract :
We have studied electron transport and electron-hole pair generation-recombination rate in terahertz-driven InAs/AlSb heterojunctions (HJ). As many as needed multiphoton channels are self-consistently taken into account. Usually, II acts as a cooling mechanism of semiconductor. In the present THz-radiation-driven case with multiphoton process the electron temperature with II process, however, is higher than that without this process. We propose to explain the counterintuitive behavior of electron temperature.
Keywords :
III-V semiconductors; aluminium compounds; electron transport theory; electron-hole recombination; indium compounds; semiconductor heterojunctions; two-photon processes; InAs-AlSb; counterintuitive behavior; electron temperature; electron transport; electron-hole pair; generation-recombination rate; multiphoton channels; multiphoton process; semiconductor cooling mechanism; terahertz-driven heterojunctions; Cooling; Electrons; Electrooptic effects; Equations; Frequency; Heterojunctions; Impact ionization; Impurities; Scattering; Temperature;
Conference_Titel :
Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005. The Joint 30th International Conference on
Print_ISBN :
0-7803-9348-1
DOI :
10.1109/ICIMW.2005.1572450
