Title :
Effects of carrier degeneracy and conduction band nonparabolicity on the simulation of HgCdTe photovoltaic devices
Author :
Quan, Z.J. ; Chen, G.B. ; Sun, L.Z. ; Ye, Z.H. ; Li, Z.F. ; Lu, W.
Author_Institution :
Shanghai Inst. of Tech. Phys., Chinese Acad. of Sci., China
Abstract :
By using the analytic model of the MCT device simulation, Rd-V curve comparisons are made with the carrier density approximations by considering (1) both carrier degeneracy and conduction band nonparabolicity, (2) only carrier degeneracy, and (3) only conduction band nonparabolicity. The effects of the omission of carrier degeneracy and conduction band nonparabolicity on each of the four types of dark current mechanisms are evaluated, which is found to lead to an enormous deviation in the simulation of MCT devices, especially for LWIR devices with heavy doping.
Keywords :
II-VI semiconductors; cadmium compounds; carrier density; conduction bands; dark conductivity; mercury compounds; photoconducting devices; photoconductivity; photovoltaic effects; semiconductor device models; HgCdTe; LWIR devices; MCT device simulation; carrier degeneracy; carrier density approximation; conduction band nonparabolicity; dark current mechanism; photovoltaic devices; Analytical models; Charge carrier density; Conducting materials; Dark current; Laboratories; Photovoltaic systems; Physics; Solar power generation; Solid modeling; Sun;
Conference_Titel :
Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005. The Joint 30th International Conference on
Print_ISBN :
0-7803-9348-1
DOI :
10.1109/ICIMW.2005.1572456
