Title :
Infrared absorption spectrum of magnesium double donors in silicon
Author_Institution :
Inst. of Phys., Acad. Sinica, Taipei, Taiwan
Abstract :
It is well known that magnesium behaves likes an interstitial double donor in silicon and the ionization energies at liquid helium temperature are 107.50 and 256.47 meV for neutral and singly ionized magnesium donors, respectively. Recently, we have found several spectral lines unobserved before from the high-resolution infrared absorption spectra of magnesium-doped silicon measured at liquid helium temperature demonstrating the existence of other neutral and singly ionized magnesium donors in silicon. Compared with the well known donors mentioned previously, they are shallower donors with smaller ionization energies. Our study clearly indicates that there are multiple neutral and singly ionized magnesium donors in silicon. We have also observed some unusual spectra surprisingly inconsistent with typical donor spectra in silicon.
Keywords :
elemental semiconductors; impurity absorption spectra; impurity states; infrared spectra; ionisation; magnesium; semiconductor doping; silicon; 107.50 meV; 256.47 meV; high-resolution infrared absorption spectra; infrared absorption spectrum; interstitial double donor; ionization energy; magnesium double donors; magnesium-doped silicon; neutral ionized magnesium donors; semiconductor doping; singly ionized magnesium donors; spectral lines; Chemical elements; Electromagnetic wave absorption; Helium; Impurities; Infrared spectra; Ionization; Magnesium; Silicon; Spectroscopy; Temperature;
Conference_Titel :
Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005. The Joint 30th International Conference on
Print_ISBN :
0-7803-9348-1
DOI :
10.1109/ICIMW.2005.1572462