DocumentCode :
447815
Title :
Observation of below-bandgap excited terahertz emission in the action spectra of GaAs/AlGaAs multiple quantum wells
Author :
Estacio, E. ; Quema, A. ; Diwa, G. ; Murakami, H. ; Ono, S. ; Sarukura, N. ; Somintac, A. ; Salvador, A.
Author_Institution :
Inst. for Molecular Sci., Okazaki, Japan
Volume :
1
fYear :
2005
fDate :
19-23 Sept. 2005
Firstpage :
273
Abstract :
We present terahertz emission of optically pumped GaAs/AlGaAs multiple quantum wells (MQWs). The action spectra exhibit emission even at excitation energies below the bandgap. Results show that the radiation could not have come from the bulk layers and is inferred to be due to shallow states under the band edge.
Keywords :
III-V semiconductors; aluminium compounds; energy gap; gallium arsenide; semiconductor quantum wells; submillimetre waves; GaAs-AlGaAs; action spectra; bandgap excitation; multiple quantum well; terahertz emission; Frequency; Gallium arsenide; Laser excitation; Laser mode locking; Magnetic field measurement; Photonic band gap; Quantum well devices; Spectroscopy; Stimulated emission; Surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005. The Joint 30th International Conference on
Print_ISBN :
0-7803-9348-1
Type :
conf
DOI :
10.1109/ICIMW.2005.1572514
Filename :
1572514
Link To Document :
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