Title :
An electrically driven mid-infrared solid state modulator
Author :
Rutt, Harvey N. ; Uppal, Suresh ; Lee, Chong Yew
Author_Institution :
Optoelectronics Res. Centre, Univ. of Southampton, UK
Abstract :
Detailed device fabrication and operation modelling has been undertaken for a mid-infrared, 8-14μm band modulator based on a high purity Germanium p-i-n diode. The results show the crucial importance of optimising material properties and dopant concentrations and profiles for optimum device performance.
Keywords :
germanium; modulators; p-i-n diodes; semiconductor doping; 8 to 14 micron; device fabrication; dopant concentration; high purity Germanium p-i-n diode; mid-infrared solid state modulator; operation modeling; Apertures; Contacts; Doping; Electrodes; Electromagnetic wave absorption; Germanium; Optical attenuators; Optical devices; Optical modulation; Solid state circuits;
Conference_Titel :
Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005. The Joint 30th International Conference on
Print_ISBN :
0-7803-9348-1
DOI :
10.1109/ICIMW.2005.1572518
