Title :
Carbon nanotube Schottky diodes for high frequency applications
Author :
Manohara, H.M. ; Wong, E.W. ; Schlecht, E. ; Hunt, B.D. ; Siegel, P.H.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
We have developed Schottky diodes using semiconducting nanotubes with titanium Schottky and platinum Ohmic contacts. At low biases these diodes showed ideality factors in the range of 1.5 to 1.9. The performance prediction as room-temperature detectors at 2.5 THz resulted in NEP potentially comparable to that of the state-of-the-art gallium arsenide solid-state Schottky diodes in the range of 10-13 W/√Hz.
Keywords :
Schottky diodes; carbon nanotubes; gallium arsenide; high-frequency effects; platinum; titanium; 2.5 THz; GaAs; NEP; Pt; Schottky diode; Ti; carbon nanotube; gallium arsenide; high frequency application; ideality factor; platinum Ohmic contact; titanium Schottky contact; Carbon nanotubes; Detectors; Frequency; Ohmic contacts; Platinum; Schottky diodes; Semiconductivity; Semiconductor diodes; Semiconductor nanotubes; Titanium;
Conference_Titel :
Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005. The Joint 30th International Conference on
Print_ISBN :
0-7803-9348-1
DOI :
10.1109/ICIMW.2005.1572520
