DocumentCode :
447859
Title :
Differential gain and non-linear gain compression of GaInNAsSb/GaAs lasers at 1.5μm
Author :
Goddard, L.L. ; Bank, S.R. ; Wistey, M.A. ; Yuen, H.B. ; Bae, H.P. ; Harris, J.S., Jr.
Author_Institution :
Solid State & Photonics Lab., Stanford Univ., CA, USA
Volume :
1
fYear :
2005
fDate :
22-27 May 2005
Firstpage :
86
Abstract :
We present temperature dependent measurements of differential gain, dg/dn, and nonlinear gain compression, ε. At 20°C, dg/dn=92×10-16cm2 and ε=1.4×10-16cm3. The 57K characteristic temperature of dg/dn limited T0. Large ε caused spectral broadening at high power.
Keywords :
III-V semiconductors; gain measurement; gallium arsenide; gallium compounds; indium compounds; semiconductor lasers; spectral line broadening; temperature measurement; 1.5 micron; 20 C; 57 K; GaInNAsSb-GaAs; GaInNAsSb/GaAs lasers; differential gain; nonlinear gain compression; spectral broadening; temperature measurement; Damping; Fiber lasers; Fiber nonlinear optics; Gallium arsenide; Power lasers; Resonance; Resonant frequency; Solid lasers; Temperature dependence; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN :
1-55752-795-4
Type :
conf
DOI :
10.1109/CLEO.2005.201685
Filename :
1572751
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=447859
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