• DocumentCode
    447860
  • Title

    1.55 μm GalnNAsSb lasers on GaAs

  • Author

    Bank, S.R. ; Wistey, M.A. ; Goddard, L.L. ; Yuen, H.B. ; Bae, H.P. ; Harris, J.S., Jr.

  • Author_Institution
    Solid State & Photonics Lab., Stanford Univ., CA, USA
  • Volume
    1
  • fYear
    2005
  • fDate
    22-27 May 2005
  • Firstpage
    89
  • Abstract
    We present a 1.55 μm laser grown on GaAs by molecular beam epitaxy. The active layer was a single GaInNAsSb quantum well surrounded by strain-compensating GaNAs barriers. The room temperature threshold current density was 2.4 kA/cm2, lasing at 1.553 μm.
  • Keywords
    III-V semiconductors; current density; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor lasers; semiconductor quantum wells; 1.55 micron; 293 to 298 K; GaAs; GaInNAsSb; GaInNAsSb laser growth; GaNAs; active layer; molecular beam epitaxy; room temperature threshold current density; single quantum well; strain-compensating GaNAs barriers; Degradation; Gallium arsenide; Lasers and electrooptics; Optical pulses; Photoluminescence; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2005. (CLEO). Conference on
  • Print_ISBN
    1-55752-795-4
  • Type

    conf

  • DOI
    10.1109/CLEO.2005.201686
  • Filename
    1572752
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=447860