DocumentCode :
447861
Title :
Effect of nitrogen content and temperature on the f3 dB of 1.3 μm dilute-nitride SQW lasers
Author :
Anton, O. ; Menoni, C.S. ; Yeh, Jeng-Ya ; Van Roy, Tod T. ; Mawst, L.J. ; Tansu, Nelson
Author_Institution :
Dept. of Electr. & Comput. Eng., Colorado State Univ., Fort Collins, CO, USA
Volume :
1
fYear :
2005
fDate :
22-27 May 2005
Firstpage :
92
Abstract :
Above-threshold frequency response measurements carried out on strain-compensated InGaAs-and-InGaAsN lasers of identical geometry reveal a reduction in the laser relaxation frequency and damping due to the incorporation of nitrogen. Raising of temperature further decreases f3 dB.
Keywords :
III-V semiconductors; damping; frequency response; gallium arsenide; gallium compounds; indium compounds; laser beams; nitrogen; quantum well lasers; 1.3 micron; InGaAs-InGaAsN; N2; above-threshold frequency response measurement; damping; dilute-nitride SQW lasers; laser relaxation frequency; nitrogen content; single-quantum well lasers; strain-compensated lasers; Bandwidth; Diode lasers; High speed optical techniques; Indium gallium arsenide; Laser modes; Lasers and electrooptics; Nitrogen; Semiconductor lasers; Temperature; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN :
1-55752-795-4
Type :
conf
DOI :
10.1109/CLEO.2005.201687
Filename :
1572753
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=447861
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