DocumentCode :
447862
Title :
1.3 μm GaInNAs bandgap difference confinement (BDC) optical amplifier
Author :
Hashimoto, Jun-ichi ; Koyama, Kenji ; Katsuyama, Tsukuru ; Tsuji, Yukihiro ; Fujii, Kousuke ; Yamazaki, Koichiro ; Ishida, Akira
Author_Institution :
OITDA, Japan
Volume :
1
fYear :
2005
fDate :
22-27 May 2005
Firstpage :
95
Abstract :
A GaInNAs BDC-SOA utilizing bandgap difference for current confinement was developed. Due to strong current and optical confinements in the lateral direction, gain and fiber coupling efficiency were significantly increased compared with a conventional GaInNAs-SOA.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical fibre communication; semiconductor optical amplifiers; 1.3 micron; GaInNAs; bandgap difference confinement; current confinement; fiber coupling efficiency; gain efficiency; optical confinement; semiconductor optical amplifier; Annealing; Bandwidth; Coatings; Lasers and electrooptics; Optical amplifiers; Optical films; Photonic band gap; Semiconductor optical amplifiers; Stimulated emission; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN :
1-55752-795-4
Type :
conf
DOI :
10.1109/CLEO.2005.201688
Filename :
1572754
Link To Document :
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