Title :
Characteristics of dilute-nitride quantum well lasers
Author :
Mawst, L.J. ; Yeh, Jeng-Ya ; Tansu, Nelson
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., WI, USA
Abstract :
Optimizing the MOCVD growth of InGaAsN has yielded high performance 1.3 μm-emitting lasers, displaying reduced temperature sensitivity compared with InP-based structures. Studies reveal the impact of nitrogen on the gain, carrier confinement, and laser characteristics.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; quantum well lasers; semiconductor growth; 1.3 micron; InGaAsN; MOCVD growth; carrier confinement; dilute-nitride quantum well laser characteristics; gain characteristics; nitrogen impact; temperature sensitivity; Computer displays; Gallium arsenide; High performance computing; MOCVD; Nitrogen; Optical materials; Quantum well lasers; Semiconductor lasers; Temperature sensors; Threshold current;
Conference_Titel :
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN :
1-55752-795-4
DOI :
10.1109/CLEO.2005.201689
