DocumentCode
447863
Title
Characteristics of dilute-nitride quantum well lasers
Author
Mawst, L.J. ; Yeh, Jeng-Ya ; Tansu, Nelson
Author_Institution
Dept. of Electr. & Comput. Eng., Wisconsin Univ., WI, USA
Volume
1
fYear
2005
fDate
22-27 May 2005
Firstpage
98
Abstract
Optimizing the MOCVD growth of InGaAsN has yielded high performance 1.3 μm-emitting lasers, displaying reduced temperature sensitivity compared with InP-based structures. Studies reveal the impact of nitrogen on the gain, carrier confinement, and laser characteristics.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; quantum well lasers; semiconductor growth; 1.3 micron; InGaAsN; MOCVD growth; carrier confinement; dilute-nitride quantum well laser characteristics; gain characteristics; nitrogen impact; temperature sensitivity; Computer displays; Gallium arsenide; High performance computing; MOCVD; Nitrogen; Optical materials; Quantum well lasers; Semiconductor lasers; Temperature sensors; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN
1-55752-795-4
Type
conf
DOI
10.1109/CLEO.2005.201689
Filename
1572755
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