Title :
The effect of temperature on the efficiency of InGaAs and InGaAsN quantum well laser structures
Author :
Palmer, D.J. ; Smowton, P.M. ; Blood, P. ; Yeh, Jeng-Ya ; Mawst, L.J. ; Tansu, Nelson
Author_Institution :
Dept. of Phys. & Astron., Cardiff Univ., UK
Abstract :
We have measured gain and recombination in an InGaAs and an InGaAsN quantum well structure as a function of temperature. We find that the inclusion of nitrogen results in a reduction in the radiative efficiency.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; nitrogen; quantum well lasers; InGaAs; InGaAsN; laser gain; nitrogen inclusion; quantum well laser structures; radiative efficiency reduction; temperature effect; Current density; Gain measurement; Indium gallium arsenide; Nitrogen; Optical buffering; Optical sensors; Quantum computing; Quantum well lasers; Spontaneous emission; Temperature;
Conference_Titel :
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN :
1-55752-795-4
DOI :
10.1109/CLEO.2005.201690
