DocumentCode :
447865
Title :
High-speed electrical modulator in high-index-contrast (HIC) Si-waveguides
Author :
Gan, Fuwan ; Kärtner, Franz X.
Author_Institution :
Dept. of Electr. & Comput. Eng., Massachusetts Univ., Cambridge, MA, USA
Volume :
1
fYear :
2005
fDate :
22-27 May 2005
Firstpage :
104
Abstract :
A CMOS-compatible Mach-Zehnder modulator based on strongly forward biased PIN-diodes is proposed, resulting in small signal modulation bandwidths beyond 20 GHz, a figure of merit of VπL=0.5 V·cm and an insertion loss of about 4 dB.
Keywords :
elemental semiconductors; optical modulation; optical waveguides; p-i-n diodes; silicon; CMOS-compatible Mach-Zehnder modulator; Si; forward biased PIN-diodes; high-index-contrast Si-waveguides; high-speed electrical modulator; insertion loss; small signal modulation bandwidths; Biomedical optical imaging; High speed optical techniques; Optical losses; Optical modulation; Optical saturation; Optical waveguides; Phase modulation; Silicon; Slabs; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN :
1-55752-795-4
Type :
conf
DOI :
10.1109/CLEO.2005.201691
Filename :
1572757
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=447865
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