DocumentCode :
447867
Title :
Fast and efficient light intensity modulation in SOI with gate-all-around transistor phase modulator
Author :
Dainesi, P. ; Moselund, K.E. ; Thevenaz, L. ; Ionescu, A.M.
Author_Institution :
Nanophotonics & Metrol. Lab., Swiss Fed. Inst. of Technol., Lausanne, Switzerland
Volume :
1
fYear :
2005
fDate :
22-27 May 2005
Firstpage :
110
Abstract :
We report fast modulation (>30 GHz) in a SOI resonant cavity using integrated Bragg mirrors and a gate-all-around transistor as active element. Modulation depth >90% can be obtained in 12.5 μm long devices.
Keywords :
integrated optics; mirrors; optical modulation; phase modulation; silicon-on-insulator; 12.5 micron; SOI resonant cavity; Si-SiO2; gate-all-around transistor phase modulator; integrated Bragg mirrors; light intensity modulation; modulation depth; Intensity modulation; MOSFETs; Mirrors; Optical devices; Optical modulation; Optical refraction; Optical variables control; Optical waveguides; Phase modulation; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN :
1-55752-795-4
Type :
conf
DOI :
10.1109/CLEO.2005.201693
Filename :
1572759
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=447867
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