Title :
UVLED based on carrier localization in AlGaN
Author :
Collins, C.J. ; Sampath, A.V. ; Garrett, G.A. ; Shen, H. ; Wraback, M. ; Readinger, E.
Author_Institution :
US Army Res. Lab., Adelphi, MD, USA
Abstract :
AlGaN samples show intense room temperature photoluminescence from localized states that is significantly red-shifted, 200-400 meV, from band edge. Double-heterostructure light-emitting diodes were fabricated using this unique layer, with electroluminescence peak at 325 nm.
Keywords :
III-V semiconductors; aluminium compounds; electroluminescence; gallium compounds; light emitting diodes; localised states; photoluminescence; red shift; semiconductor heterojunctions; 200 to 400 meV; 293 to 298 K; 325 nm; AlGaN; UVLED; carrier localization; double-heterostructure light-emitting diode; electroluminescence; photoluminescence; red-shift; Aluminum alloys; Aluminum gallium nitride; Biomedical optical imaging; Fluctuations; Light emitting diodes; Optical sensors; Photoluminescence; Plasma temperature; Reflectivity; Temperature sensors;
Conference_Titel :
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN :
1-55752-795-4
DOI :
10.1109/CLEO.2005.201707
