DocumentCode :
447876
Title :
Short-wavelength ultraviolet light-emitting diodes based on AlGaN
Author :
Razeghi, M. ; Yasan, A. ; McClintock, R. ; Mayes, K. ; Kung, P.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA
Volume :
1
fYear :
2005
fDate :
22-27 May 2005
Firstpage :
153
Abstract :
We review our progress toward realization of highly-efficient ultraviolet light-emitting diodes (UV LEDs) based on high Al-composition AlxGa1-xN. Milliwatt level optical output powers have been measured at wavelengths as short as 247 nm.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; light emitting diodes; reviews; 247 nm; Al-composition; AlxGa1-xN; UV LED; milliwatt level optical output power; review; short-wavelength ultraviolet light-emitting diode; Aluminum gallium nitride; Conductivity; Fingers; Geometrical optics; Geometry; Light emitting diodes; Optical devices; Power generation; Temperature; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN :
1-55752-795-4
Type :
conf
DOI :
10.1109/CLEO.2005.201708
Filename :
1572774
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=447876
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