Title :
Surface Potential Based Modeling of Thermal Noise for HEMT Circuit Simulation
Author :
Dasgupta, Avirup ; Khandelwal, Sourabh ; Chauhan, Yogesh Singh
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol. Kanpur, Kanpur, India
Abstract :
In this letter, an analytical surface potential based compact model for thermal noise in high electron mobility transistors (HEMTs) is presented. The model is based on the recently proposed surface potential formulation for charges and current. The model is tunable and applicable to any HEMT device.
Keywords :
HEMT circuits; high electron mobility transistors; semiconductor device models; semiconductor device noise; thermal noise; HEMT circuit simulation; HEMT device; high-electron mobility transistors; surface potential-based compact modelling; thermal noise; Analytical models; Gallium nitride; HEMTs; Integrated circuit modeling; Mathematical model; Noise; Thermal noise; HEMT; noise model; thermal noise;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2015.2422472
