DocumentCode
447909
Title
MOVPE grown quantum cascade lasers: single mode performance and structural quality
Author
Green, R.P. ; Wilson, L.R. ; Revin, D.G. ; Zibik, E.A. ; Cockburn, J.W. ; Krysa, A.B. ; Tey, C.M. ; Roberts, J.S. ; Cullis, A.G. ; Pflügl, C. ; Schrenk, W. ; Strasser, G. ; Offermans, P. ; Koenraad, P.M. ; Wolter, J.H.
Author_Institution
Dept. of Phys. & Astron., Univ. of Sheffield
Volume
1
fYear
2005
fDate
27-27 May 2005
Firstpage
254
Lastpage
256
Abstract
We report single longitudinal mode, T> 300K operation of MOVPE-grown InGaAs/ AlInAs DFB quantum cascade lasers. Structural investigation indicates the epitaxial quality of the active region to be equivalent to high performance MBE grown structures
Keywords
III-V semiconductors; MOCVD; aluminium compounds; distributed feedback lasers; gallium arsenide; indium compounds; molecular beam epitaxial growth; quantum cascade lasers; DFB lasers; InGaAs-AlInAs; MBE structures; MOVPE; epitaxial quality; quantum cascade lasers; Density measurement; Epitaxial growth; Epitaxial layers; Gas lasers; Laser modes; Quantum cascade lasers; Temperature; Threshold current; Waveguide lasers; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Conference_Location
Baltimore, MD
Print_ISBN
1-55752-795-4
Type
conf
DOI
10.1109/CLEO.2005.201743
Filename
1572809
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