Title :
Fabrication of all-epitaxial semiconductor laser using selective interface fermi-level pinning
Author :
Ahn, J. ; Freisem, S. ; Lu, D. ; Gazula, D. ; Deppe, D.G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Abstract :
All epitaxial fully planarized GaAs based semiconductor lasers are demonstrated using a selective Fermi-level pinning at a heterointerface. The results show that this method provides efficient self-aligned current- and mode-confinement and mode controllability by intracavity patterning.
Keywords :
Fermi level; III-V semiconductors; gallium arsenide; interface states; laser cavity resonators; optical fabrication; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; GaAs; all-epitaxial semiconductor laser fabrication; epitaxial fully planarized GaAs; heterointerface; intracavity patterning; mode-confinement; selective interface fermi-level pinning; self-aligned current-confinement; Gallium arsenide; Laser modes; Lasers and electrooptics; Optical device fabrication; Optical surface waves; Semiconductor lasers; Surface emitting lasers; Testing; Vertical cavity surface emitting lasers; Voltage;
Conference_Titel :
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN :
1-55752-795-4
DOI :
10.1109/CLEO.2005.201848
