Title :
InGaAsP/InP dual wavelength bipolar cascade lasers with 100 nm wavelength spacing
Author :
Yan, J. ; Cai, J. ; Ru, G. ; Yu, X. ; Choa, F.S. ; Fan, J.
Author_Institution :
Dept. of Comput. Sci. & Electr. Eng., Maryland Univ., Baltimore, MD, USA
Abstract :
Simultaneous dual-wavelength (1350 nm and 1450 nm) lasing is achieved from an InGaAsP/InP bipolar cascade laser, which includes two different active regions and a low resistance hetero-tunnel-junction. Ultra-broadband gain materials can be obtained with such a structure.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor heterojunctions; semiconductor lasers; 1350 nm; 1450 nm; InGaAsP-InP; InGaAsP-InP bipolar cascade laser; active regions; dual wavelength bipolar cascade laser; low resistance hetero-tunnel-junction; ultra-broadband gain materials; wavelength spacing; Indium phosphide; Laser modes; Optical interferometry; Optical waveguides; Quantum cascade lasers; Quantum well devices; Quantum well lasers; Semiconductor lasers; Temperature; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN :
1-55752-795-4
DOI :
10.1109/CLEO.2005.201850
