Title :
Design and demonstration of high-power and high-speed evanescently coupled photodiodes with partially p-doped photo-absorption layer
Author :
Wu, Y.-S. ; Shi, J.-W. ; Wu, J.-Y. ; Huang, F.-H. ; Chan, Y.-J. ; Huang, Y.-L. ; Xuan, R.
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Taoyuan, Taiwan
Abstract :
An evanescently-coupled-photodiode with partially p-doped photo-absorption layer was demonstrated and designed by a bandwidth simulation model to optimize its speed performance. Excellent performance of speed, saturation-power, and responsivity can be achieved simultaneously at 1.55 μm wavelength.
Keywords :
high-speed optical techniques; integrated optoelectronics; optical design techniques; optical waveguide components; photoconductivity; photodiodes; photoemission; 1.55 micron; bandwidth simulation model; high-speed evanescently coupled photodiodes design; partially p-doped photo-absorption layer; waveguide photodiode; Bandwidth; Circuit simulation; Electron mobility; High speed optical techniques; Optical saturation; Optical surface waves; Optical waveguides; Photoconductivity; Photodetectors; Photodiodes;
Conference_Titel :
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN :
1-55752-795-4
DOI :
10.1109/CLEO.2005.201853
