DocumentCode :
448258
Title :
0.3 W cw red microchip VECSEL
Author :
Hastie, Jennifer E. ; Calvez, Stephane ; Dawson, Martin D. ; Leinonen, Tomi ; Pessa, Markus
Author_Institution :
Inst. of Photonics, Strathclyde Univ., UK
Volume :
2
fYear :
2005
fDate :
22-27 May 2005
Firstpage :
1390
Abstract :
A GaInP/AlGaInP vertical external cavity surface-emitting laser with an optically-contacted, single-crystal diamond microcavity was optically pumped to achieve 0.3 W continuous wave output power at 676 nm, in a circularly-symmetric beam with M2 less than 2.
Keywords :
aluminium compounds; diamond; gallium compounds; indium compounds; laser beams; microcavity lasers; optical pumping; semiconductor lasers; surface emitting lasers; 0.3 W; 676 nm; GaInP-AlGaInP; circularly-symmetric beam; continuous wave output power; cw red microchip VECSEL; optical pumping; optical-contact; single-crystal diamond microcavity; vertical external cavity surface-emitting laser; Laser excitation; Microcavities; Microchip lasers; Optical pumping; Optical surface waves; Power lasers; Pump lasers; Surface emitting lasers; Surface waves; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN :
1-55752-795-4
Type :
conf
DOI :
10.1109/CLEO.2005.202135
Filename :
1573201
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=448258
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