DocumentCode
448277
Title
Strong near-ultraviolet and blue emissions at room temperature from In-rich InGaN/GaN multi-quantum well structures
Author
Kwon, Soon-Yong ; Baik, Sung-Il ; Kim, Hee Jin ; Ko, Dong-Su ; Kim, Young-Woon ; Yoon, Euijoon ; Park, Yoon-Soo ; Yoon, Jung-Won ; Cheong, Heonsik M.
Author_Institution
Sch. of Mater. Sci. & Eng., Seoul Nat. Univ., South Korea
Volume
2
fYear
2005
fDate
22-27 May 2005
Firstpage
1447
Abstract
We obtained strong near-UV and blue emissions at room temperature from In-rich InGaN/GaN MQW structures. We believe that use of less than 2-nm-thick In-rich InGaN QW layer can be a new candidate for near-UV and visible sources, which might replace the conventional Ga-rich, thicker InGaN QW layer.
Keywords
III-V semiconductors; MOCVD; gallium compounds; indium compounds; semiconductor quantum wells; ultraviolet sources; 293 to 298 K; InGaN-GaN; MOCVD; blue emission; multiquantum well structure; near-ultraviolet emission; Atomic force microscopy; Atomic layer deposition; Gallium nitride; Indium; Light emitting diodes; Optical films; Optical scattering; Quantum well devices; Stimulated emission; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN
1-55752-795-4
Type
conf
DOI
10.1109/CLEO.2005.202154
Filename
1573220
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