Title :
Simulation and experiment for high voltage high power IGCT device
Author :
Li, Haishan ; Li, Yaohua
Author_Institution :
Inst. of Electr. Eng., Chinese Acad. of Sci., Beijing
Abstract :
To imitate the static and dynamic behavior of the integrated gate-commutated thyristor (IGCT), this paper presents a new circuit level model for this high voltage high power device, which is implemented in PSIM simulation tool. The effectiveness of this model is verified by comparing simulation with experimental results of a 4.5 kV/4 kA IGCT device
Keywords :
semiconductor device models; thyristors; 4 kA; 4.5 kV; PSIM simulation tool; circuit level model; dynamic behavior; high voltage high power device; integrated gate-commutated thyristor; static behavior; Anodes; Arithmetic; Circuit simulation; Insulated gate bipolar transistors; Low voltage; Power electronics; Propagation delay; Snubbers; Thyristors; Voltage control;
Conference_Titel :
Electrical Machines and Systems, 2005. ICEMS 2005. Proceedings of the Eighth International Conference on
Conference_Location :
Nanjing
Print_ISBN :
7-5062-7407-8
DOI :
10.1109/ICEMS.2005.202722
