• DocumentCode
    449045
  • Title

    Experimental evaluation of carrier transport, gain, T0 and chirp of 1.55 μm MQW structures with different barrier compositions

  • Author

    Akram, M. Nadeem ; Schatz, Richard ; Marcinkevicius, S. ; Kjebon, Olle ; Berggren, J.

  • Author_Institution
    IMIT Dept., R. Inst. of Technol., Stockholm, Sweden
  • Volume
    2
  • fYear
    2005
  • fDate
    25-29 Sept. 2005
  • Firstpage
    297
  • Abstract
    Direct carrier transport measurements were performed for different InGaAsP/InGaAlAs MQW test structures. Shallow InGaAlAs barrier QW showed faster carrier transport. Semi-insulating regrown FP lasers with InGaAlAs barrier QW showed improved high temperature operation, modal gain, differential modal gain and chirp.
  • Keywords
    III-V semiconductors; chirp modulation; gadolinium compounds; gallium arsenide; indium compounds; laser modes; laser transitions; quantum well lasers; semiconductor device measurement; 1.55 mum; FP lasers; InGaAsP-InGaAlAs; InGaAsP/InGaAlAs MQW test structures; barrier compositions; carrier transport; differential modal gain; modal gain;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Optical Communication, 2005. ECOC 2005. 31st European Conference on
  • Conference_Location
    IET
  • ISSN
    0537-9989
  • Print_ISBN
    0-86341-543-1
  • Type

    conf

  • Filename
    1576237
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=449045