Title :
Highly productive and reliable 10 Gb/s AlInas avalanche photodiodes
Author :
Yagyu, E. ; Ishimura, E. ; Nakaji, M. ; Aoyagi, T. ; Tokuda, Y.
Author_Institution :
Adv. Technol. R&D Center, Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
A new planar-type APD having an AlInAs multiplication layer was realized with high productivity and superior performance, which is sufficient for practical use in 10 Gb/s optical communications.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; indium compounds; optical communication equipment; optical fibre communication; semiconductor device reliability; 10 Gbit/s; AlInAs; AlInAs multiplication layer; avalanche photodiodes; optical communications; planar-type APD; productive photodiodes; reliable photodiodes;
Conference_Titel :
Optical Communication, 2005. ECOC 2005. 31st European Conference on
Conference_Location :
IET
Print_ISBN :
0-86341-543-1
