• DocumentCode
    449148
  • Title

    Highly productive and reliable 10 Gb/s AlInas avalanche photodiodes

  • Author

    Yagyu, E. ; Ishimura, E. ; Nakaji, M. ; Aoyagi, T. ; Tokuda, Y.

  • Author_Institution
    Adv. Technol. R&D Center, Mitsubishi Electr. Corp., Hyogo, Japan
  • Volume
    3
  • fYear
    2005
  • fDate
    25-29 Sept. 2005
  • Firstpage
    489
  • Abstract
    A new planar-type APD having an AlInAs multiplication layer was realized with high productivity and superior performance, which is sufficient for practical use in 10 Gb/s optical communications.
  • Keywords
    III-V semiconductors; aluminium compounds; avalanche photodiodes; indium compounds; optical communication equipment; optical fibre communication; semiconductor device reliability; 10 Gbit/s; AlInAs; AlInAs multiplication layer; avalanche photodiodes; optical communications; planar-type APD; productive photodiodes; reliable photodiodes;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Optical Communication, 2005. ECOC 2005. 31st European Conference on
  • Conference_Location
    IET
  • ISSN
    0537-9989
  • Print_ISBN
    0-86341-543-1
  • Type

    conf

  • Filename
    1576351
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=449148