Title :
10 Gb/s InAs/InP [001] quantum dot lasers operation on C-band up to 75°C
Author :
Dagens, B. ; Lelarge, F. ; Morel, L. ; Make, D. ; Rousseau, B. ; Le Gouezigou, O. ; Provost, J.G. ; Poingt, F. ; Le Gouezigou, L. ; Pommereau, F. ; Landreau, J. ; Accard, A. ; Thedrez, B.
Author_Institution :
Alcatel-Thales III-V Lab., Marcoussis, France
Abstract :
10 Gb/s operation at 1.55 μm of an InAs/InP [001] dots-in-a-well buried ridge stripe Fabry-Perot laser is demonstrated for the first time, in the temperature range 25-75°C.
Keywords :
III-V semiconductors; indium compounds; optical communication equipment; optical fibre communication; quantum dot lasers; 1.55 mum; 10 Gbit/s; 25 to 75 degC; 4 to 8 GHz; C-band; Fabry-Perot laser; InAs-InP; InAs/InP [001] lasers; buried ridge stripe laser; dots-in-a-well laser; quantum dot lasers;
Conference_Titel :
Optical Communication, 2005. ECOC 2005. 31st European Conference on
Conference_Location :
IET
Print_ISBN :
0-86341-543-1
