DocumentCode
449182
Title
Laterally coupled DFB lasers based on InAs/InP-Qdash structures for broadband applications
Author
Kaiser, W. ; Mathwig, K. ; Deubert, S. ; Somers, A. ; Forchel, A. ; Reithmaier, J.P. ; Parillaud, O. ; Krakowski, M. ; Hadass, D. ; Mikhelashvili, V. ; Eisenstein, G. ; Legge, M.
Author_Institution
Tech. Physik, Wurzburg Univ., Germany
Volume
3
fYear
2005
fDate
25-29 Sept. 2005
Firstpage
559
Abstract
Laterally coupled DFB lasers based on quantum dashes were fabricated by FIB lithography. CW-powers above 30 mW, high SMSRs, a modulation bandwidth of 7.6 GHz and singlemode emission from 1.5 to 1.9 μm were demonstrated.
Keywords
III-V semiconductors; distributed feedback lasers; focused ion beam technology; indium compounds; ion beam lithography; laser modes; optical fabrication; quantum dot lasers; 1.5 to 1.9 mum; 7.6 GHz; DFB lasers; FIB lithography; InAs/InP-Qdash structures; SMSR; modulation bandwidth; quantum dashes; singlemode emission;
fLanguage
English
Publisher
iet
Conference_Titel
Optical Communication, 2005. ECOC 2005. 31st European Conference on
Conference_Location
IET
ISSN
0537-9989
Print_ISBN
0-86341-543-1
Type
conf
Filename
1576385
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